The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Jan. 28, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hung-Shu Huang, Taichung, TW;
Jhih-Bin Chen, Hsinchu, TW;
Ming Chyi Liu, Hsinchu, TW;
Yu-Chang Jong, Hsinchu, TW;
Chien-Chih Chou, New Taipei, TW;
Jhu-Min Song, Nantou County, TW;
Yi-Kai Ciou, Taoyuan, TW;
Tsung-Chieh Tsai, Hsin-Chu County, TW;
Yu-Lun Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.