The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Apr. 26, 2019
Applicant:
Femtometrix, Inc., Irvine, CA (US);
Inventor:
Ming Lei, Irvine, CA (US);
Assignee:
FemtoMetrix, Inc., Los Angeles, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/265 (2006.01); G01N 21/84 (2006.01); G01N 21/95 (2006.01); G01R 31/26 (2020.01); H01L 21/66 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2656 (2013.01); G01N 21/9505 (2013.01); G01R 31/2601 (2013.01); H01L 22/12 (2013.01); H01L 22/30 (2013.01); H01L 22/34 (2013.01); H01L 27/0617 (2013.01); G01N 2021/8438 (2013.01); G01N 2021/8461 (2013.01);
Abstract
Second Harmonic Generation (SHG) can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. In some instances, SHG is used to evaluate an interfacial region such as between metal and oxide. Various parameters such as input polarization, output polarization, and azimuthal angle of incident beam, may affect the SHG signal. Accordingly, such parameters are varied for different types of patterns on the wafer. SHG metrology on various test structures may also assist in characterizing a sample.