The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Dec. 13, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Toshiyasu Fujimoto, Higashihiroshima, JP;
Yoshihiro Matsumoto, Kobe, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 29/6675 (2013.01); H01L 29/78618 (2013.01); H01L 29/78672 (2013.01); H10B 12/02 (2023.02);
Abstract
Disclosed herein is an apparatus that includes a semiconductor substrate having source/drain regions and a gate trench located between the source/drain regions; and a gate electrode embedded in the gate trench via a gate insulating film. The gate electrode includes a first polycrystalline silicon film located at a bottom of the gate trench and a metal film stacked on the first polycrystalline silicon film. The first polycrystalline silicon film is doped with boron.