The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
May. 09, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shahaji B. More, Hsinchu, TW;
Chandrashekhar Prakash Savant, Hsinchu, TW;
Chun Hsiung Tsai, Xinpu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device having a gate structure and a method of forming same are provided. The semiconductor device includes a substrate and a gate structure over the substrate. The substrate has a first region and a second region. The gate structure extends across an interface between the first region and the second region. The gate structure includes a first gate dielectric layer over the first region, a second gate dielectric layer over the second region, a first work function layer over the first gate dielectric layer, a barrier layer along a sidewall of the first work function layer and above the interface between the first region and the second region, and a second work function layer over the first work function layer, the barrier layer and the second gate dielectric layer. The second work function layer is in physical contact with a top surface of the first work function layer.