The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Jun. 03, 2022
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Assignee:
SanDisk Technologies LLC, Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract
In order to achieve tight and uniform erased threshold voltage distributions in a non-volatile memory system that includes non-volatile memory cells arranged in blocks that have multiple sub-blocks and has an erase process using gate induced drain leakage (GIDL) to generate charge carriers that change threshold voltage of the memory cells, the magnitude of the GIDL is adjusted separately for the sub-blocks.
Song, Yi. (2024). Non-volatile memory with tuning of erase process (U.S. Patent No. 12154630). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12154630
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile