The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Aug. 09, 2023
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company, Limited, Shanghai, CN;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC CHINA COMPANY, LIMITED, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); G06F 30/392 (2020.01); H03K 3/037 (2006.01); H03K 3/356 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01); G06F 30/392 (2020.01); H01L 27/092 (2013.01); H03K 3/037 (2013.01); H03K 3/35613 (2013.01); H03K 19/0185 (2013.01);
Abstract
A method of manufacturing an IC structure includes forming first through fourth PMOS transistors in an n-well, constructing a bias circuit including the first and second PMOS transistors, constructing a level shifter including the third and fourth PMOS transistors, building a first power distribution structure including electrical connections to each of the first and third PMOS transistors, and building a second power distribution structure including electrical connections to each of the second and fourth PMOS transistors.