Semiconductor structure and method of forming the same

Abstract

A method includes forming an n-type Fin-Field Effect Transistor (FinFET) and a p-type FinFET. The forming of the n-type FinFFT includes: forming a first auxiliary gate stack over a first semiconductor fin; forming an n-type source/drain region on the first semiconductor fin adjacent to the first auxiliary gate stack; and performing a first etch to form a first recess with a first depth on a first top surface of the n-type source/drain region. The forming of the p-type FinFFT includes: forming a second auxiliary gate stack over a second semiconductor fin; forming a p-type source/drain region on the second semiconductor fin adjacent to the second auxiliary gate stack; and performing a second etch to form a second recess with a second depth on a second top surface of the p-type source/drain region. The first depth is greater than the second depth.