The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Sep. 29, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Wei Xie, Wuhan, CN;

Di Wang, Wuhan, CN;

Tingting Zhao, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure containing a core region and a staircase region, a channel structure extending through the stack structure in the core region, and a first support structure extending through the stack structure in the staircase region. The first support structure includes a first portion extending along a first direction and a second portion protruding from the first portion along a second direction perpendicular to the first direction.


Find Patent Forward Citations

Xie, Wei. (2024). Three-dimensional memory devices and methods for forming the same (U.S. Patent No. 12148714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12148714

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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