The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Feb. 15, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Kerem Akarvardar, Palo Alto, CA (US);
Yu Chao Lin, Hsinchu, TW;
Wei-Sheng Yun, Taipei, TW;
Shao-Ming Yu, Zhubei, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Tung Ying Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A semiconductor structure includes a first dielectric layer, an electrode in the first dielectric layer, a second dielectric layer in the electrode, and a phase change material over the first dielectric layer, the electrode, and the second dielectric layer. According to some embodiments, an uppermost surface of the electrode is at least one of above an uppermost surface of the first dielectric layer, above an uppermost surface of the second dielectric layer, or above a lowermost surface of the phase change material.