The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Apr. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Feng Yu, Hsinchu County, TW;
Jiao-Hao Chen, Hsinchu, TW;
Chih-Yu Hsu, Hsinchu County, TW;
Chih-Wei Lee, Hsinchu, TW;
Chien-Yuan Chen, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device and related method for forming a gate structure. In some embodiments, a semiconductor device includes a fin extending from a substrate. In some cases, the fin includes a plurality of semiconductor channel layers. In some examples, the semiconductor device further includes a gate dielectric surrounding each of the plurality of semiconductor channel layers. In some embodiments, a first thickness of the gate dielectric disposed on a top surface of a topmost semiconductor channel layer of the plurality of semiconductor channel layers is greater than a second thickness of the gate dielectric disposed on a surface of another semiconductor channel layer disposed beneath the topmost semiconductor channel layer.