The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jan. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Yu Lin, Hsinchu, TW;
Yi-Lin Fan, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
Sheng-Hsiung Chen, Hsinchu, TW;
Jerry Chang Jui Kao, Hsinchu, TW;
Xiangdong Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinhu, TW;
Abstract
A cell region of a semiconductor device includes a first and second isolation dummy gates extending along a first direction. The semiconductor device further includes a first gate extending along the first direction and between the first isolation dummy gate and the second isolation dummy gate. The semiconductor device includes a second gate extending along the first direction, the second gate being between the first isolation dummy gate and the second isolation dummy gate relative to a second direction perpendicular to the first direction. The semiconductor device also includes a first active region and a second active region. The first active region extending in the second direction between the first isolation dummy gate and the second isolation dummy gate. The first active region has a first length in the second direction, and the second active region has a second length in the second direction different from the first length.