IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12136599 B1

PDFFull Text
Date of Patent:
Nov. 05, 2024

Filed:

Feb. 02, 2022

Three-dimensional memory devices and fabricating methods thereof

Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

He Chen, Hubei, CN;

Shu Wu, Hubei, CN;

Zhen Pan, Hubei, CN;

Siping Hu, Hubei, CN;

Yi Zhao, Hubei, CN;

Ziqun Hua, Hubei, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Attorney:

Conley Rose, P.C.

Primary Examiner:

Niki H Nguyen

Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 23/00 (2006.01); H01L 23/535 (2006.01); H01L 23/58 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/535 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/351 (2013.01);
Abstract

Disclosed are three-dimensional (3D) memory devices and fabricating methods thereof. In some embodiments, a disclosed memory device comprises a wafer structure having a sealing region and a chip region. The wafer structure comprises a substrate, a memory string array on a first side of the substrate in the chip region, a first protection structure and a second protection structure on the first side of the substrate in the sealing region, and a first contact and a second contact extending through the substrate in the sealing region. The first contact is in contact with the first protection structure, and the second contact is in contact with the second protection structure.

Find Patent Forward Citations

Loading…