The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Aug. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Hui Weng, New Taipei, TW;
Chen-Yu Liu, Kaohsiung, TW;
Chih-Cheng Liu, Hsinchu, TW;
Yi-Chen Kuo, Taichung, TW;
Jia-Lin Wei, Hsinchu, TW;
Yen-Yu Chen, Taipei, TW;
Jr-Hung Li, Chupei, TW;
Yahru Cheng, Taipei, TW;
Chi-Ming Yang, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Ching-Yu Chang, Yilang County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.