The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Feb. 24, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yongqing Wang, Wuhan, CN;
Siping Hu, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method for a 3D NAND memory device includes providing a substrate, forming at least one contact pad over a first portion of a face side of the substrate, forming memory cells over a second portion of the face side of the substrate, depositing a first dielectric layer to cover the at least one contact pad and the memory cells of, forming a first connecting pads over the first dielectric layer and connected to the at least one contact pad and the memory cells, bonding the first connecting pads with second connecting pads of a peripheral structure, and exposing the at least one contact pad from a back side of the substrate.