The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jul. 27, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate stack over the substrate. The semiconductor device structure also includes a spacer element over a sidewall of the gate stack. The spacer element is doped with a dopant, and the dopant reduces a dielectric constant of the spacer element. The spacer element has a first atomic concentration of the dopant near an inner surface of the spacer element adjacent to the gate stack. The spacer element has a second atomic concentration of the dopant near an outer surface of the spacer element. The first atomic concentration of the dopant is different than the second atomic concentration of the dopant.