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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12131994 B1

PDFFull Text
Date of Patent:
Oct. 29, 2024

Filed:

Jul. 31, 2023

Metallization lines on integrated circuit products

Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Lars Liebmann, Mechanicville, NY (US);

Daniel Chanemougame, Troy, NY (US);

Geng Han, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:

Francois Pagette

Hoffman Warnick LLC

Primary Examiner:

Dale E Page

Assistant Examiner:

Abbigale A Boyle

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/76814 (2013.01); H01L 21/76832 (2013.01); H01L 21/76835 (2013.01); H01L 21/76861 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01);
Abstract

An integrated circuit product includes a first layer of insulating material above a device layer of a semiconductor substrate and with a lowermost surface above an uppermost surface of a gate of a transistor in a device layer of the semiconductor substrate. A metallization blocking structure is in an opening in the first layer of insulating material and has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. A metallization trench is in the first layer of insulating material on opposite sides of the metallization blocking structure. A contact structure is in the second insulating material and entirely below the metallization trench. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure and a long axis extending along the first and second portions.

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