The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Jun. 23, 2022
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Hsiu-Mei Yu, Hsinchu, TW;

Guang-Yuan Jiang, Hsinchu, TW;

Cheng-Yi Hsieh, Jhubei, TW;

Wei-Chan Chang, Taoyuan, TW;

Chang-Sheng Lin, Jhunan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3672 (2013.01); H01L 21/02266 (2013.01); H01L 21/28194 (2013.01); H01L 21/4828 (2013.01);
Abstract

A semiconductor device includes: a substrate; a seed layer disposed on the substrate; a compound semiconductor stack layer disposed on the seed layer; and a source metal layer and a drain metal layer disposed on the compound semiconductor stack layer. The semiconductor device further includes a conductive layer at least partially covering the source metal layer and the drain metal layer, and covering opposing side surfaces of the seed layer and opposing side surfaces of the compound semiconductor stack layer. The conductive layer electrically connects the seed layer and the source metal layer.


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