Triggering of stronger write pulses in a memory device based on prior read operations

Abstract

Systems, methods, and apparatus to select an enhanced write pulse for a write operation in a memory device. In one approach, stronger reset pulses are triggered when there is an increased risk of memory cell threshold voltage degradation. Memory cells read by a relatively higher number of read operations are recorded by a controller of a memory device by updating a lookup table with addresses of the memory cells read. For a new write operation, the controller determines if a reset on set write operation is to be performed. The controller also searches the lookup table to determine if an address for the target bits or codeword of the write operation are in the lookup table. If both conditions are satisfied, then the magnitude of the write pulse is increased for programming the memory cells.