The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Sep. 29, 2021
Changxin Memory Technologies, Inc., Anhui, CN;
Xin Huang, Anhui, CN;
Shih-Shin Wang, Anhui, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments of this application provide a method, an apparatus and a device for measuring a semiconductor structure. Before measurement of a to-be-measured semiconductor structure, a reference semiconductor structure corresponding to the to-be-measured semiconductor structure is set, and a first simulation model corresponding to the to-be-measured semiconductor structure and a second simulation model corresponding to the reference semiconductor structure are established, some structure parameters of the to-be-measured semiconductor structure have parameter values different from those of corresponding structure parameters of the reference semiconductor structure. During measurement of the to-be-measured semiconductor structure, both the to-be-measured semiconductor structure and the reference semiconductor structure are simultaneously measured by using an OCD measurement technology, to find structure parameters that can satisfy both the first simulation model and the second simulation model, and parameter value of each structure parameter finally determined for the first simulation model is used as structure parameter of the to-be-measured semiconductor structure.