The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jul. 01, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Xianjun Wu, Hefei, CN;
Weibing Shang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Disclosed are a data writing circuit, a data writing method, and a memory. The data writing circuit includes: a delay generation circuit, configured to generate a sub-grab signal of each storage area based on an initial grab signal and data transmission delay of each storage area, and generate a grab enable signal based on all of the sub-grab signals. A time interval between the time that each storage area receives data transmitted by a global data line and the time of receiving a column selection signal meets a preset range. A read-write control circuit writes data on a data bus into the global data line based on the grab enable signal. The global data line transmits the data to the storage area by using a column decoding circuit based on the column selection signal, so as to optimize tCCD of DRAM.