The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jan. 05, 2024
Zhejiang Lab, Zhejiang, CN;
Zhejiang University, Zhejiang, CN;
Cuifang Kuang, Hangzhou, CN;
Hongqing Wang, Hangzhou, CN;
Ziang Wang, Hangzhou, CN;
Zhenyao Yang, Hangzhou, CN;
Mengbo Tang, Hangzhou, CN;
Lanxin Zhan, Hangzhou, CN;
Xiaoyi Zhang, Hangzhou, CN;
Jisen Wen, Hangzhou, CN;
Xu Liu, Hangzhou, CN;
ZHEJIANG LAB, Hangzhou, CN;
ZHEJIANG UNIVERSITY, Hangzhou, CN;
Abstract
A method and an apparatus for direct writing photoetching by parallel interpenetrating super-resolution high-speed laser. The method of the present application uses a parallel interpenetrating algorithm. Firstly, a multi-beam solid light spot for writing is generated based on a writing light spatial light modulator; a multi-beam hollow light spot for inhibition is generated based on an inhibition optical spatial light modulator; the multi-beam solid light spot is combined with the multi-beam hollow light spot to generate a modulated multi-beam light spot; a writing waveform is output based on a multichannel acousto-optic modulator, a displacement stage moves at a constant speed until writing of a whole column of areas is completed, an optical switch is turned off, and the displacement stage conducts one-time stepping movement; the process is not stopped until all patterns are written.