The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jun. 25, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sheng-Liang Pan, Hsinchu, TW;
Yung-Tzu Chen, Hsinchu, TW;
Chung-Chieh Lee, Taipei, TW;
Yung-Chang Hsu, Hsinchu, TW;
Chia-Yang Hung, Kaohsiung, TW;
Po-Chuan Wang, Taipei, TW;
Guan-Xuan Chen, Taoyuan, TW;
Huan-Just Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.