The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Sep. 29, 2017
Intel Corporation, Santa Clara, CA (US);
Marko Radosavljevic, Portland, OR (US);
Han Wui Then, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A device including a III-N material is described. In an example, the device has terminal structure having a first group III-Nitride (III-N) material. The terminal structure has a central body and a first plurality of fins, and a second plurality of fins, opposite the first plurality of fins. A polarization charge inducing layer is above a first portion of the central body. A gate electrode is above the polarization charge inducing layer. The device further includes a source structure and a drain structure, each including impurity dopants, on opposite sides of the gate electrode and on the plurality of fins, and a source contact on the source structure and a drain contact on the drain structure.