The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Mar. 17, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Xiang Zhou, Mountain View, CA (US);
Teng Hooi Goh, Fremont, CA (US);
Yoshie Kimura, Castro Valley, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02164 (2013.01); H01L 21/0228 (2013.01);
Abstract
Provided herein are methods and systems for reducing roughness of EUV resists and improving etched features. The methods may involve depositing a thin film on a patterned EUV resist having a stress level that is less compressive than a stress level of the patterned EUV resist. The resulting composite stress may reduce buckling and/or bulging of the patterned EUV resist.