The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jul. 25, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Li Lin, Kaohsiung, TW;
Chih-Teng Liao, Hsinchu, TW;
Jui Fu Hsieh, Zhubei, TW;
Chih Hsuan Cheng, Houlong Township, TW;
Tzu-Chan Weng, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a gate layer over the fin; and patterning the gate layer in a plasma etching tool using a plasma etching process to form a gate over the fin, where patterning the gate layer includes: turning on and off a top radio frequency (RF) source of the plasma etching tool alternately during the plasma etching process; and turning on and off a bottom RF source of the plasma etching tool alternately during the plasma etching process, where there is a timing offset between first time instants when the top RF source is turned on and respective second time instants when the bottom RF source is turned on.