The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jan. 12, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Qiang Wan, Hefei, CN;

Jun Xia, Hefei, CN;

Kangshu Zhan, Hefei, CN;

Penghui Xu, Hefei, CN;

Tao Liu, Hefei, CN;

Sen Li, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01);
Abstract

A method for forming a pattern can include the following operations. A substrate is provided, on the surface of which a patterned photoresist layer is formed. Based on the photoresist layer, isolation sidewalls are formed, in which each isolation sidewall includes a first sidewall close to the photoresist layer and a second sidewall away from the photoresist layer. Core material layers are formed between two adjacent isolation sidewalls. The second sidewalls are removed to form the pattern composed of the first sidewalls and the core material layers.


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