The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Sep. 07, 2023
Applicant:

Celestial Ai Inc., Santa Clara, CA (US);

Inventors:

Philip Winterbottom, San Jose, CA (US);

David Lazovsky, Los Gatos, CA (US);

Ankur Aggarwal, Pleasanton, CA (US);

Martinus Bos, San Jose, CA (US);

Subal Sahni, La Jolla, CA (US);

Assignee:

Celestial AI Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/42 (2006.01); G02B 6/43 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
G02B 6/4295 (2013.01); G02B 6/4246 (2013.01); G02B 6/428 (2013.01); G02F 1/0157 (2021.01); G02B 6/4245 (2013.01);
Abstract

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.


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