The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Sep. 25, 2020
Intel Corporation, Santa Clara, CA (US);
Anthony V. Mule', Portland, OR (US);
David J. Towner, Portland, OR (US);
Dragos Seghete, Portland, OR (US);
Christopher R. Ryder, Portland, OR (US);
Angel Aquino Gonzalez, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Multi-layer etch stop layers are described. In an example, an integrated circuit structure includes a conductive line in a first interlayer dielectric material above a substrate. A first dielectric etch stop layer, a second dielectric layer and a third dielectric layer are on the conductive line and the first interlayer dielectric material. A second interlayer dielectric material is on the third dielectric etch stop layer. An opening is in the second interlayer dielectric material, in the third dielectric etch stop layer, and in the second dielectric etch stop layer, in the first dielectric etch stop layer. A conductive structure is in the opening, the conductive structure in direct contact with the conductive line.