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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12111576 B1

PDFFull Text
Date of Patent:
Oct. 08, 2024

Filed:

Oct. 31, 2022

Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventor:

Christine Y Ouyang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Mesfin T Asfaw

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/26 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/32 (2013.01); G03F 7/26 (2013.01); G03F 7/38 (2013.01); G03F 7/405 (2013.01);
Abstract

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer using an extreme ultraviolet (EUV) radiation; performing an infiltration process to the photoresist layer using a metal-containing chemical; and performing a developing process to the photoresist layer to form a patterned resist layer.

Find Patent Forward Citations

Ouyang, Christine. (2024). Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance (U.S. Patent No. 12111576). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12111576

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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