The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Dec. 15, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Huimei Zhou, Albany, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Su Chen Fan, Cohoes, NY (US);
Miaomiao Wang, Albany, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/6653 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
Semiconductor devices and methods of forming the same include forming dummy gate spacers in a trench in a semiconductor substrate. A dummy gate is formed in the trench. An exposed dummy gate spacer is replaced with a sacrificial spacer. A cap layer is formed over the dummy gate. The cap layer is etched to expose the dummy gate. The sacrificial spacer is replaced with an isolation dielectric spacer. The dummy gate is replaced with a conductor.