The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Mar. 25, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yi Rop Kim, Hwaseong-si, KR;
Kui Hyun Yoon, Yongin-si, KR;
Yun Hwan Kim, Hwaseong-si, KR;
Moon Eon Lee, Yongin-si, KR;
Seok Woo Lee, Changwon-si, KR;
Dong Hee Han, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A plasma process apparatus includes a chamber in which a plasma process is performed, an electrostatic chuck which supports a wafer inside the chamber and comprises a first portion and a second portion disposed on the first portion, a first electrode disposed inside the electrostatic chuck, a second electrode which is spaced apart from the first electrode inside the electrostatic chuck, surrounds the first electrode in a plane defined by the first direction and a second direction perpendicular to the first direction, and is disposed on the same plane as the first electrode, a power supply configured to apply a voltage to each of the first electrode and the second electrode, a plurality of cooling gas supply lines which penetrates the electrostatic chuck in a third direction perpendicular to the first and second directions and is configured to provide a cooling gas to the wafer.