The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Aug. 15, 2022
Micron Technology, Inc., Boise, ID (US);
Yu-Chung Lien, San Jose, CA (US);
Zhenming Zhou, San Jose, CA (US);
Tomer Tzvi Eliash, Sunnyvale, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Implementations described herein relate to detecting a memory write reliability risk without using a write verify operation. In some implementations, a memory device may perform a program operation that includes a single program pulse and that does not include a program verify operation immediately after the single program pulse. The memory device may set a flag value based on comparing a transition time and a transition time threshold. The transition time may be a time to transition from a first voltage to a second voltage during the program operation. The memory device may selectively perform a mitigation operation based on whether the flag value is set to a first value or a second value.