The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Jun. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hai-Dang Trinh, Hsinchu, TW;

Chii-Ming Wu, Taipei, TW;

Cheng-Yuan Tsai, Chu-Pei, TW;

Tzu-Chung Tsai, Hsinchu County, TW;

Fa-Shen Jiang, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); H10N 70/231 (2023.02);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip. A first conductive structure overlies a substrate. A second conductive structure overlies the first conductive structure. A data storage structure is disposed between the first and second conductive structures. The data storage structure includes a first dielectric layer, a second dielectric layer, and a third dielectric layer. Respective bandgaps of the first, second, and third dielectric layers are different from one another.


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