The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jul. 07, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ming-Cheng Lin, Yilan, TW;
Chen-Bau Wu, Zhubei, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Haw-Yun Wu, Zhubei, TW;
Liang-Yu Su, Yunlin County, TW;
Yun-Hsiang Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a method of forming a high electron mobility transistor (HEMT) device. The method includes forming a passivation layer over a substrate. A source contact and a drain contact are formed within the passivation layer. A part of the passivation layer is removed to form a cavity. The cavity has a lower portion formed by a first sidewall and a second sidewall of the passivation layer and an upper portion formed by the first sidewall of the passivation layer and a sidewall of the source contact. A gate structure is formed within the passivation layer between the drain contact and the cavity. A cap structure is formed within the cavity.