The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Oct. 18, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Li-Wei Chu, Hsinchu, TW;
Wun-Jie Lin, Hsinchu, TW;
Yu-Ti Su, Hsinchu, TW;
Ming-Fu Tsai, Hsinchu, TW;
Jam-Wem Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes manufacturing doped zones in a first semiconductor material over a substrate. The method further includes forming an isolation structure between adjacent doped zones of the first semiconductor material. The method further includes manufacturing lines extending in a first direction over the doped zones of the first semiconductor material, wherein each of the lines has a line width measured along a second direction perpendicular to the first direction. The method further includes trimming the lines into line segments having ends over the isolation structure. The method further includes etching a transistor gate electrode over the substrate, wherein transistor gate electrode has a gate electrode width measured along the second direction, and wherein the line width is substantially similar to the gate electrode width.