The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Dec. 20, 2019
Applicant:
Central Glass Company, Limited, Ube, JP;
Inventors:
Assignee:
CENTRAL GLASS COMPANY, LIMITED, Ube, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); C09K 13/02 (2006.01); C09K 13/08 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); C07C 17/093 (2006.01); C07C 17/361 (2006.01); C07C 19/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C09K 13/02 (2013.01); C09K 13/08 (2013.01); H01L 21/3065 (2013.01); H01L 21/31138 (2013.01); C07C 17/093 (2013.01); C07C 17/361 (2013.01); C07C 19/08 (2013.01);
Abstract
A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CFI and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CFI is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.