The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

May. 02, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jun Fujiki, Tokyo, JP;

Yoshiaki Fukuzumi, Yokohama, JP;

Akira Goda, Setagaya, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another, each of the tiers including memory cells and a control gate for the memory cells, each of the tiers including first transistors connected in series between the control gate in a respective tier and a conductive line, and second transistors connected in series between the control gate in the respective tier and the conductive line, the second transistors connected in parallel with the first transistors between the control gate and the conductive line, conductive joints coupled to channel regions of the first and second transistors, and gates for the first transistors and second transistors, each of the gates shared by one of the first transistors and one of the second transistors.


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