The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Dec. 18, 2019
Applicant:

Anji Microelectronics (Shanghai) Co., Ltd, Shanghai, CN;

Inventors:

Wenting Zhou, Shanghai, CN;

Jianfen Jing, Shanghai, CN;

Ying Yao, Shanghai, CN;

Xinyuan Cai, Shanghai, CN;

Jian Ma, Shanghai, CN;

Heng Li, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); H01L 21/3212 (2013.01);
Abstract

A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.


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