The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jun. 06, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chin-Hung Chen, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chih-Kai Hsu, Tainan, TW;
Chia-Jung Hsu, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0605 (2013.01); H01L 27/0886 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01); H01L 29/7856 (2013.01); H01L 21/823821 (2013.01); H01L 27/1211 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10344 (2013.01);
Abstract
A method for fabricating semiconductor device includes: forming a first semiconductor layer and an insulating layer on a substrate; removing the insulating layer and the first semiconductor layer to form openings; forming a second semiconductor layer in the openings; and patterning the second semiconductor layer, the insulating layer, and the first semiconductor layer to form fin-shaped structures.