The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Oct. 14, 2021
The Institute of Optics and Electronics, the Chinese Academy of Sciences, Sichuan, CN;
Xiangang Luo, Sichuan, CN;
Mingfeng Xu, Sichuan, CN;
Mingbo Pu, Sichuan, CN;
Di Sang, Sichuan, CN;
Xiaoliang Ma, Sichuan, CN;
Xiong Li, Sichuan, CN;
Ping Gao, Sichuan, CN;
Zeyu Zhao, Sichuan, CN;
Abstract
A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.