The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Dec. 02, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Jun Xia, Hefei, CN;
Qiang Wan, Hefei, CN;
Penghui Xu, Hefei, CN;
Tao Liu, Hefei, CN;
Sen Li, Hefei, CN;
Kangshu Zhan, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
An embodiment of the disclosure provides a method for manufacturing a semiconductor structure, including: providing a substrate, where the substrate has a peripheral region and an array region; stacking and forming an insulating layer and a mask layer with a mask pattern on the substrate; etching the insulating layer with the mask layer as a mask to form a contact hole penetrating the insulating layer at the array region; reserving the mask layer; in a direction perpendicular to a surface of the substrate, providing a thickness difference between the mask layer of the peripheral region and the mask layer of the array region; forming a first material layer; forming a second material layer; etching a part of the mask layer with the second material layer as the mask; and removing the remaining second material layer, the remaining mask layer and the first material layer on the remaining mask layer.