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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12087834 B1

PDFFull Text
Date of Patent:
Sep. 10, 2024

Filed:

Mar. 04, 2022

Semiconductor structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Wen Huang, Tainan, TW;

Chung-Ting Ko, Kaohsiung, TW;

Hong-Hsien Ke, Changhua County, TW;

Chia-Hui Lin, Taichung, TW;

Tai-Chun Huang, Hsin-Chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/02063 (2013.01); H01L 21/0217 (2013.01); H01L 21/02321 (2013.01); H01L 21/0234 (2013.01); H01L 21/02343 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/3115 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 29/0847 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a gate structure, a source/drain structure, a barrier layer, and a glue layer. The gate structure is over a fin structure. The source/drain structure is in the fin structure and adjacent to the gate structure. The barrier layer is over the source/drain structure. The glue layer is adjacent to the barrier layer. The glue layer has an extending portion in direct contact with the gate structure.

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