The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Aug. 08, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Fong Tsai, Hsinchu, TW;

Ya-Lun Chen, Hsinchu, TW;

Tsai-Yu Huang, Hsinchu, TW;

Yahru Cheng, Hsinchu, TW;

Huicheng Chang, Hsinchu, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); G03F 7/16 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31058 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); H01L 21/0276 (2013.01); H01L 21/31144 (2013.01);
Abstract

To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.


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