The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
May. 04, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chung-Yang Huang, Chiayi County, TW;
Hao-Ming Chang, Pingtung, TW;
Ming Che Li, Hsinchu, TW;
Yu-Hsin Hsu, Taichung, TW;
Po-Cheng Lai, Hsinchu, TW;
Kuan-Shien Lee, Taichung, TW;
Wei-Hsin Lin, Hsinchu, TW;
Yi-Hsuan Lin, Hsinchu, TW;
Wang Cheng Shih, Hsinchu, TW;
Cheng-Ming Lin, Yunlin County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.