The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
May. 23, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Chewn-Pu Jou, Hsinchu, TW;
Stefan Rusu, Sunnyvale, CA (US);
Felix Ying-Kit Tsui, Cupertino, CA (US);
Lan-Chou Cho, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
Disclosed are apparatus and methods for optical coupling. In one example, a method for forming an optical coupler, includes: forming an insulation layer on a semiconductor substrate; epitaxially growing a semiconductor material on the insulation layer to form a semiconductor layer; etching, according to a predetermined pattern, the semiconductor layer to form: an array of etched holes in the semiconductor layer to form a grating region, a first taper structure extending from a first side of the grating region, wherein a shape of the first taper structure in the semiconductor layer is a first triangle that is asymmetric about any line perpendicular to the first side of the grating region, and a second taper structure extending from a second side of the grating region, wherein a shape of the second taper structure in the semiconductor layer is a second triangle that is asymmetric about any line perpendicular to the second side of the grating region, wherein the first side and the second side are substantially perpendicular to each other; and depositing a dielectric material into the array of etched regions to form an array of scattering elements in the semiconductor layer, wherein the scattering elements are arranged to form a two-dimensional (2D) grating.