The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
May. 05, 2021
Applicant:
Etron Technology, Inc., Hsinchu, TW;
Inventor:
Chao-Chun Lu, Taipei, TW;
Assignees:
Etron Technology, Inc., Hsinchu, TW;
Invention And Collaboration Laboratory Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/373 (2023.02);
Abstract
A memory cell structure includes a silicon substrate, a transistor, a bit line, and a capacitor. The silicon substrate has a silicon surface. The transistor is coupled to the silicon surface, wherein the transistor includes a gate structure, a first conductive region, and a second conductive region. The bit line is electrically coupled to the first conductive region of the transistor and positioned under the silicon surface. The capacitor is over the transistor and electrically coupled to the second conductive region of the transistor.