The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Nov. 09, 2021
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Tsmc China Company, Limited, Shanghai, CN;

Inventors:

CunCun Chen, Hsinchu, TW;

XinYong Wang, Hsinchu, TW;

Yaqi Ma, Hsinchu, TW;

Lei Pan, Hsinchu, TW;

MingJian Wang, Hsinchu, TW;

JiaLiang Zhong, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/76898 (2013.01); H01L 21/823871 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 27/092 (2013.01);
Abstract

An integrated circuit (IC) device includes a first substrate, a through substrate via (TSV) in the first substrate, and a first antenna effect protection circuit over the first substrate and electrically coupled to the TSV. The first antenna effect protection circuit includes at least one first transistor of a first type, and at least one second transistor of a second type different from the first type. A gate terminal, a first terminal and a second terminal of each of the at least one first transistor and the at least one second transistor are electrically coupled together, and to the TSV.


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