The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Mar. 14, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tatsuya Miyahara, Yamanashi, JP;
Yoshihiro Takezawa, Yamanashi, JP;
Daisuke Suzuki, Yamanashi, JP;
Hiroyuki Hayashi, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01); C30B 28/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02667 (2013.01); C23C 16/24 (2013.01); C23C 16/52 (2013.01); C30B 28/02 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01);
Abstract
To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.