The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Aug. 12, 2020
Applicant:
Etron Technology, Inc., Hsinchu, TW;
Inventor:
Chao-Chun Lu, Taipei, TW;
Assignees:
Etron Technology, Inc., Hsinchu, TW;
Invention And Collaboration Laboratory Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/28518 (2013.01); H01L 21/76224 (2013.01); H01L 27/0921 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/45 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01);
Abstract
A transistor structure includes a semiconductor substrate, agate structure, a channel region, and a first conductive region. The semiconductor substrate has a semiconductor surface. The channel region includes a first terminal and a second terminal. The first conductive region is electrically coupled to the first terminal of the channel region, and the first conductive region includes a first metal containing region under the semiconductor surface.