The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jun. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ming-Yen Chiu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/544 (2013.01); H01L 23/585 (2013.01); H01L 24/05 (2013.01); H01L 24/15 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/5448 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16265 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/214 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/94 (2013.01);
Abstract

An integrated circuit component including a semiconductor die, a plurality of conductive vias and a protection layer is provided. The semiconductor die includes an active surface and a plurality of conductive pads disposed on the active surface. The conductive vias are respectively disposed on and in contact with the conductive pads, wherein each conductive via of a first group of the conductive vias has a first maximum size, each conductive via of a second group of the conductive vias has a second maximum size, and the first maximum size is less than the second maximum size in a vertical projection on the active surface. The protection layer covers the active surface and is at least in contact with sidewalls of the conductive vias.


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